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Input channels: 8 (plus 1 bypass channel)
Wires per channel: 4
Series resistance: 2.0 Ω (max.)
Isolation resistance: >10 GΩ (typ.)
Input capacitance:
<60 pF on selected channel, between any 2 leads or ground.
<25 pF on selected to unselected channel, any 2 leads.
<25 pF on unselected channels.
Max. switching capacity: 10 mA at 10 VDC
Thermal EMF: <10 µV (typ.)
Switching order:
Break-before-make (default)
Make-before-break (remote interface only)
Switching speed: 50 ms max. (break-before-make)
Active buffer:
Bandwidth: 1 MHz (typ.)
Input noise: 30 nV/√Hz at 10 Hz, 16 nV/√Hz at 1 kHz
Bias current: 5 pA (typ.)
Input overload: ±1.0 V
Operating temperature: 0 °C to 40 °C (non-condensing)
Interface: Serial via SIM interface
Connectors: Serial via SIM interface:
Input channels: DB37 (female, front panel)
Common: DB9 (male, rear panel)
Bypass: DB9 (female, rear panel)
SIM: DB15 (male) SIM interface
Power: Power supplied by the SIM900 Mainframe, or optionally by a user-supplied DC power supply (±15 V and +5 V).
Dimensions: 1.5" × 3.6" × 7.0" (WHL)
Weight: 1.5 lbs.
