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Width: 2.7 mm
Height: 10.8 mm
Length: 7.8 mm
Technology: Si
Unit Weight: 60 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 36 W
DC Current Gain hFE Max: 130
Gain Bandwidth Product fT: 3 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 45 V
Continuous Collector Current: 4 A
Maximum DC Collector Current: 4 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 30
Collector- Emitter Voltage VCEO Max: 45 V
Collector-Emitter Saturation Voltage: 200 mV
