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Width: 15.7 mm
Height: 14.7 mm
Length: 26.7 mm
Technology: Si
Unit Weight: 5.200 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 57 W
DC Current Gain hFE Max: 8.5
Emitter- Base Voltage VEBO: 9 V
Continuous Collector Current: 10 A
Maximum DC Collector Current: 10 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 5.5 at 5 A, 5 V
Collector- Emitter Voltage VCEO Max: 700 V
Collector-Emitter Saturation Voltage: 1.5 V
