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Gain: 17.3 dB
Technology: Si
Output Power: 80 W
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Number of Channels: 1 Channel
Operating Frequency: 1.5 GHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 170 W
Vgs - Gate-Source Voltage: + 2.9 V
Id - Continuous Drain Current: 12 A
Maximum Operating Temperature: + 200 C
Vds - Drain-Source Breakdown Voltage: 90 V
