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Gain: 24.6 dB
Width: 9.78 mm
Height: 5.33 mm
Length: 34.04 mm
Technology: Si
Unit Weight: 2.100 g
Channel Mode: Enhancement
Output Power: 580 W
Configuration: Dual Common Source
Mounting Style: SMD/SMT
Operating Frequency: 250 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 625 W
Vgs - Gate-Source Voltage: + 20 V
Id - Continuous Drain Current: 20 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Forward Transconductance - Min: 3 S to 5 S
Vds - Drain-Source Breakdown Voltage: 250 V
