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Width: 5.15 mm
Height: 20.15 mm
Length: 15.75 mm
Technology: Si
Unit Weight: 38 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 125 W
Gain Bandwidth Product fT: 3 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 100 V
Maximum DC Collector Current: 25 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 25
Collector- Emitter Voltage VCEO Max: 100 V
Collector-Emitter Saturation Voltage: 1.8 V
