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Vgs(th): 1.3 V
Vgs (Max): -12V
Gate Charge (Qg): 3.5nC
Power consumption: 1.4W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 20V
Continuous drain current: 5.3A
Input Capacitance (Ciss): 533pF
Operating temperature range: -55 to 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 35mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.8|8V
