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Width: 1.15 mm
Height: 0.2 mm
Length: 2.2 mm
Fall Time: 589 ns
Rise Time: 353 ns
Technology: Si
Unit Weight: 1.500 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 10.9 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.3 W
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 205 ns
Typical Turn-Off Delay Time: 711 ns
Id - Continuous Drain Current: 8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 36 S
Rds On - Drain-Source Resistance: 11.9 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V
Vgs th - Gate-Source Threshold Voltage: 750 mV
