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Width: 4.4 mm
Height: 2 mm
Length: 2.6 mm
Fall Time: 12 us
Rise Time: 3 us
Output Type: NPN Phototransistor
Mounting Style: SMD/SMT
Isolation Voltage: 3750 Vrms
Number of Channels: 1 Channel
If - Forward Current: 50 mA
Vf - Forward Voltage: 1.5 V
Vr - Reverse Voltage: 6 V
Current Transfer Ratio: 50 %
Pd - Power Dissipation: 170 mW
Maximum Collector Current: 50 mA
Current Transfer Ratio - Max: 600 %
Current Transfer Ratio - Min: 50 %
Maximum Operating Temperature: + 110 C
Minimum Operating Temperature: - 55 C
Maximum Collector Emitter Voltage: 80 V
Collector-Emitter Breakdown Voltage: 80 V
Maximum Collector Emitter Saturation Voltage: 400 mV
