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Fall Time: 14 ns
Rise Time: 18 ns
Technology: Si
Qg - Gate Charge: 13.6 nC
Pd - Power Dissipation: 2.5 W
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Typical Turn-On Delay Time: 8 ns
Typical Turn-Off Delay Time: 22 ns
Id - Continuous Drain Current: 10.2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 50 C
Rds On - Drain-Source Resistance: 26 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
