BJT - Transistor lưỡng cực PNP Epitaxial Xsistr Fairchild KSA992FBTA

Technology: Si

Unit Weight: 240 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: - 50 mA

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 150

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 90 mV