Bộ cách ly quang đầu ra Transistor Đầu ra Phototransistor Tỷ số truyền dòng 80-240% Vishay General Semiconductor CNY65ABST

Width: 9.6 mm

Height: 6.1 mm

Length: 17.8 mm

Fall Time: 2.7 us

Rise Time: 2.4 us

Output Type: NPN Phototransistor

Unit Weight: 260 mg

Mounting Style: SMD/SMT

Isolation Voltage: 13900 Vrms

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Description/Function: Optocoupler, Phototransistor Output, Very High Isolation Voltage

If - Forward Current: 75 mA

Vf - Forward Voltage: 1.6 V

Vr - Reverse Voltage: 5 V

Current Transfer Ratio: 80 %

Pd - Power Dissipation: 250 mW

Maximum Collector Current: 50 mA

Current Transfer Ratio - Max: 240 %

Current Transfer Ratio - Min: 80 %

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 55 C

Maximum Collector Emitter Voltage: 32 V

Collector-Emitter Breakdown Voltage: 32 V

Maximum Collector Emitter Saturation Voltage: 300 mV