MOSFET Đôi N-Kênh 20V 700 milli-ohm @ 4.5V Vishay General Semiconductor SI1024X-T1-GE3

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 750 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 280 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 36 ns

Id - Continuous Drain Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1 S

Rds On - Drain-Source Resistance: 700 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 450 mV