MOSFET -20V Vds 8V Vgs SC89-6 Vishay General Semiconductor SI1077X-T1-GE3

Width: 1.2 mm

Height: 0.6 mm

Length: 1.66 mm

Fall Time: 28 ns

Rise Time: 17 ns

Technology: Si

Unit Weight: 32 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 31.1 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 330 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 24 ns

Typical Turn-Off Delay Time: 95 ns

Id - Continuous Drain Current: 1.75 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 10 S

Rds On - Drain-Source Resistance: 65 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V