MOSFET 60V Vds 20V Vgs PowerPAK 1212-8 Vishay General Semiconductor SI7220DN-T1-E3

Fall Time: 10 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 20 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.6 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 4.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 15 S

Rds On - Drain-Source Resistance: 60 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1 V