MOSFET P kênh -40V Vds đạt chuẩn AEC-Q101 Vishay General Semiconductor SQM40031EL_GE3

Width: 9.65 mm

Height: 4.83 mm

Length: 10.67 mm

Fall Time: 165 ns

Rise Time: 30 ns

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 800 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 375 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 21 ns

Typical Turn-Off Delay Time: 250 ns

Id - Continuous Drain Current: 120 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 123 S

Rds On - Drain-Source Resistance: 2.5 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V