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SiC MOSFET 1700V 20mohm TO-247-4 G3R SiC MOSFET GeneSiC G3R20MT17K

Fall Time: 60 ns

Rise Time: 129 ns

Technology: SiC

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 256 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 569 W

Vgs - Gate-Source Voltage: - 5 V, + 15 V

Typical Turn-On Delay Time: 104 ns

Typical Turn-Off Delay Time: 134 ns

Id - Continuous Drain Current: 101 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 38.6 S

Rds On - Drain-Source Resistance: 20 mOhms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 2.7 V

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