MOSFET kênh N 80V 23A TDSON-8 OptiMOS 3 Infineon BSC340N08NS3GATMA1

Width: 5.15 mm

Height: 1.27 mm

Length: 5.9 mm

Fall Time: 2 ns

Rise Time: 3 ns

Technology: Si

Unit Weight: 104.400 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 9.1 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 32 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 11 ns

Id - Continuous Drain Current: 23 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 8 S

Rds On - Drain-Source Resistance: 34 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 2 V