MOSFET (MOSFET_)40V 60V Infineon IPP80N06S2L07AKSA2

Width: 4.4 mm

Height: 15.65 mm

Length: 10 mm

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 130 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 210 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 80 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 7 mOhms

Vds - Drain-Source Breakdown Voltage: 55 V

Vgs th - Gate-Source Threshold Voltage: 1.6 V