MOSFET 150V 1 Kênh N HEXFET 34,5mOhm 39nC Infineon IRF6643TRPBF

Width: 5.05 mm

Height: 0.7 mm

Length: 6.35 mm

Fall Time: 4.4 ns

Rise Time: 5 ns

Technology: Si

Unit Weight: 500 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 39 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 89 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9.2 ns

Typical Turn-Off Delay Time: 13 ns

Id - Continuous Drain Current: 6.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 16 S

Rds On - Drain-Source Resistance: 29 mOhms

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: 4 V