Mô-đun Silicon IGBT Chuẩn Dễ Dàng Infineon DF200R07W2H3B77BPSA1

Technology: Si

Configuration: 3-Phase Inverter

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.46 V

Continuous Collector Current at 25 C: 100 A