Mô-đun IGBT 650 V, 50 A Mô-đun IGBT PIM Infineon FB50R07W2E3C36BPSA1

Technology: Si

Mounting Style: Through Hole

Pd - Power Dissipation: 20 mW

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.28 V