Mô-đun IGBT Silicon 650 V, 100 A mô-đun IGBT sáu gói Infineon FS100R07N2E4BPSA1

Technology: Si

Configuration: 6-Pack

Pd - Power Dissipation: 335 W

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 100 A