Mô-đun IGBT SiC 950 V, 200 A mô-đun IGBT 3 cấp Infineon FS3L200R10W3S7FB11BPSA1

Technology: Si

Configuration: 3-Phase Inverter

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 950 V

Collector-Emitter Saturation Voltage: 1.27 V

Continuous Collector Current at 25 C: 70 A