MOSFET P-Kênh -40V -180A D2PAK-6 OptiMOS-P2 Infineon IPB180P04P4L-02

Width: 9.25 mm

Height: 4.4 mm

Length: 10 mm

Fall Time: 119 ns

Rise Time: 28 ns

Technology: Si

Unit Weight: 1.600 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 220 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 150 W

Vgs - Gate-Source Voltage: - 16 V, + 5 V

Typical Turn-On Delay Time: 32 ns

Typical Turn-Off Delay Time: 146 ns

Id - Continuous Drain Current: 180 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 3.9 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V