MOSFET Infineon IPB80P03P405ATMA1

Vgs(th): 4 V

Vgs (Max): 20V

Gate Charge (Qg): 130nC

Power consumption: 137W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 80A

Input Capacitance (Ciss): 10300pF

Operating temperature range: -55 to 175C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 4.7mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet