MOSFET Infineon IPI22N03S4L15AKSA1

Vgs(th): 2.2 V

Vgs (Max): 16V

Gate Charge (Qg): 14nC

Power consumption: 31W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 22A

Input Capacitance (Ciss): 980pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 14.9mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V