MOSFET Infineon IRF9310PBF

Vgs(th): 2.4 V

Vgs (Max): 20V

Gate Charge (Qg): 165nC

Power consumption: 2.5W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 20A

Input Capacitance (Ciss): 5250pF

Operating temperature range: -55 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 4.6mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V