MOSFET P-Kênh -60V -8.8A DPAK-2 Infineon SPD08P06PGBTMA1

Width: 6.22 mm

Height: 2.3 mm

Length: 6.5 mm

Fall Time: 14 ns

Rise Time: 46 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 13 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 42 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 48 ns

Id - Continuous Drain Current: 8.83 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2.5 S

Rds On - Drain-Source Resistance: 230 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 4 V