Transistor IGBT 40 Ampe 1600V IXYS IXBF40N160

Width: 5.03 mm

Height: 20.88 mm

Length: 19.91 mm

Technology: Si

Unit Weight: 9 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 250 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 28 A

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.6 kV

Continuous Collector Current Ic Max: 40 A

Collector-Emitter Saturation Voltage: 6.2 V

Continuous Collector Current at 25 C: 28 A