Transistor IGBT 75 Ampe 1700V 6.00 Rds IXYS IXBN75N170A

Width: 25.42 mm

Height: 9.6 mm

Length: 38.23 mm

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 625 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 75 A

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Continuous Collector Current Ic Max: 350 A

Collector-Emitter Saturation Voltage: 4.95 V

Continuous Collector Current at 25 C: 75 A