Transistor IGBT 10 Ampe 1700V 2.3 Rds IXYS IXBT10N170

Width: 14 mm

Height: 5.1 mm

Length: 16.05 mm

Technology: Si

Unit Weight: 4.500 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 140 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 20 A

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Continuous Collector Current Ic Max: 40 A

Collector-Emitter Saturation Voltage: 3.4 V

Continuous Collector Current at 25 C: 20 A