HiperFET 850V Lớp X HiPerFE MOSFET Công Suất IXYS IXFN110N85X

Fall Time: 11 ns

Rise Time: 25 ns

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.17 kW

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 50 ns

Typical Turn-Off Delay Time: 144 ns

Id - Continuous Drain Current: 110 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 33 mOhms

Vds - Drain-Source Breakdown Voltage: 850 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V