GigaMOS MOSFET Công Suất 230A 200V IXYS IXFN230N20T

Width: 25.42 mm

Height: 12.22 mm

Length: 38.23 mm

Fall Time: 17 ns

Rise Time: 38 ns

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.09 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 58 ns

Typical Turn-Off Delay Time: 62 ns

Id - Continuous Drain Current: 220 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 7.5 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 3 V