MOSFET Công Suất Cực HiPerFET 20 Ampe 1000V 1 Rds IXYS IXFT20N100P

Width: 14 mm

Height: 5.1 mm

Length: 16.05 mm

Fall Time: 45 ns

Rise Time: 37 ns

Technology: Si

Unit Weight: 4.500 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 126 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 660 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 40 ns

Typical Turn-Off Delay Time: 56 ns

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 8 S

Rds On - Drain-Source Resistance: 570 mOhms

Vds - Drain-Source Breakdown Voltage: 1 kV

Vgs th - Gate-Source Threshold Voltage: 6.5 V