Transistor IGBT 1200V, 12A IGBT; Dòng G IXYS IXGA12N120A3

Width: 10.41 mm

Height: 4.83 mm

Length: 9.65 mm

Technology: Si

Unit Weight: 1.600 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 100 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 22 A

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 60 A

Collector-Emitter Saturation Voltage: 3 V

Continuous Collector Current at 25 C: 22 A