Transistor IGBT IGBT, Diode 1200V, 75A IXYS IXGH40N120B2D1

Width: 5.3 mm

Height: 21.46 mm

Length: 16.26 mm

Technology: Si

Unit Weight: 6.500 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 380 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 75 A

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 200 A

Collector-Emitter Saturation Voltage: 3.5 V

Continuous Collector Current at 25 C: 75 A