Transistor IGBT Dòng G-SERIES A3/B3/C3 GENX3 IGBT 600V 200A IXYS IXGN200N60B3

Width: 25.42 mm

Height: 9.6 mm

Length: 38.23 mm

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 830 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 300 A

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 1.2 kA

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 300 A