Transistor IGBT Cao Áp NPT IGBTS 1700V 100A IXYS IXGX100N170

Width: 5.21 mm

Height: 21.34 mm

Length: 16.13 mm

Technology: Si

Unit Weight: 6.500 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 830 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 170 A

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Continuous Collector Current Ic Max: 600 A

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 170 A