MOSFET - 120 Ampe - 65V 0,01 Rds IXYS IXTH120P065T

Fall Time: 21 ns

Rise Time: 28 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 P-Channel

Qg - Gate Charge: 58 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 298 W

Vgs - Gate-Source Voltage: - 15 V, + 15 V

Id - Continuous Drain Current: 120 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 75 S

Rds On - Drain-Source Resistance: 10 mOhms

Vds - Drain-Source Breakdown Voltage: 65 V

Vgs th - Gate-Source Threshold Voltage: 4 V