MOSFET chế độ suy giảm 6Amps 1000V IXYS IXTH6N100D2

Width: 5.3 mm

Height: 21.46 mm

Length: 16.26 mm

Fall Time: 47 ns

Rise Time: 80 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Depletion

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 95 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 25 ns

Typical Turn-Off Delay Time: 34 ns

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2.6 S

Rds On - Drain-Source Resistance: 2.2 Ohms

Vds - Drain-Source Breakdown Voltage: 1 kV

Vgs th - Gate-Source Threshold Voltage: 4.5 V