MOSFET MOSFET Id130 BVdass100 IXYS IXTP130N10T

Width: 4.82 mm

Height: 9.15 mm

Length: 10.66 mm

Fall Time: 28 ns

Rise Time: 47 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 W

Typical Turn-On Delay Time: 30 ns

Typical Turn-Off Delay Time: 44 ns

Id - Continuous Drain Current: 130 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 93 S

Rds On - Drain-Source Resistance: 8.5 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V