Advanced Semiconductor, Inc. HF75-28F BJTs - バイポーラトランジスタ NPN シリコン RF パワートランジスタ

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 140 W

DC Current Gain hFE Max: 100 at 1 A, 5 V

Gain Bandwidth Product fT: 30 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 10 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 10 at 1 A, 5 V

Collector- Emitter Voltage VCEO Max: 35 V