Advanced Semiconductor, Inc. MRF171 RFパワーMOSFET RFトランジスタ

Gain: 15 dB

Technology: Si

Unit Weight: 8.431 g

Output Power: 45 W

Configuration: Single

Mounting Style: SMD/SMT

Operating Frequency: 200 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 115 W

Vgs - Gate-Source Voltage: + 40 V

Id - Continuous Drain Current: 4.5 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 700 uOhms

Vds - Drain-Source Breakdown Voltage: 65 V

Vgs th - Gate-Source Threshold Voltage: 6 V