CML Micro MWT-PH11F RFパワーMOSFET 狭帯域および広帯域高効率アンプ、高出力アンプ、および発振器用途

Gain: 9 dB

Technology: GaAs

Unit Weight: 0.140 mg

Output Power: 32 dBm

Transistor Type: pHEMT

Operating Frequency: 12 GHz

Id - Continuous Drain Current: 440 mA to 800 mA

Maximum Operating Temperature: + 150 C

Vds - Drain-Source Breakdown Voltage: 8 V