Diotec Semiconductor BC856S BJTs - バイポーラトランジスタ BJT, SOT-363, 65V, 100mA, PNP

Unit Weight: 30 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 310 mW

DC Current Gain hFE Max: 350

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 65 V

Collector-Emitter Saturation Voltage: 600 mV