Diotec Semiconductor DI035P04PT MOSFET、パワーQFN 3x3、-40V、-35A、150℃、P

Fall Time: 5 ns

Rise Time: 26 ns

Technology: Si

Unit Weight: 160 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Power MOSFET

Qg - Gate Charge: 30 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 25 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 40 ns

Typical Turn-Off Delay Time: 32 ns

Id - Continuous Drain Current: 35 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 15 S

Rds On - Drain-Source Resistance: 15 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.7 V