Fairchild FDG6322C FET SC70-6 COMP N-P-CH

Width: 1.25 mm

Height: 1.1 mm

Length: 2 mm

Fall Time: 4.5 ns, 8 ns

Rise Time: 4.5 ns, 8 ns

Technology: Si

Unit Weight: 28 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 400 pC, 1.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 300 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 5 ns, 7 ns

Typical Turn-Off Delay Time: 4 ns, 55 ns

Id - Continuous Drain Current: 220 mA, 410 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.2 S, 0.9 S

Rds On - Drain-Source Resistance: 4 Ohms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 650 mV, 1.5 V