Vishay General Semiconductor SI4816BDY-T1-E3 MOSFETs 30V Vds 20V Vgs SO-8

Width: 3.9 mm

Height: 1.75 mm

Length: 4.9 mm

Fall Time: 9 ns, 11 ns

Rise Time: 9 ns, 9 ns

Technology: Si

Unit Weight: 187 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 7.8 nC, 11.6 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.4 W, 2.4 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 11 ns, 13 ns

Typical Turn-Off Delay Time: 24 ns, 31 ns

Id - Continuous Drain Current: 6.8 A, 11.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 30 S, 31 S

Rds On - Drain-Source Resistance: 11.5 mOhms, 18.5 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V