Infineon BF 771 E6327 RFバイポーラトランジスタ NPN RFトランジスタ 12V 80mA 580mW

Width: 1.3 mm

Height: 1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 580 mW

Gain Bandwidth Product fT: 8000 MHz

Emitter- Base Voltage VEBO: 2 V

Collector- Base Voltage VCBO: 20 V

Continuous Collector Current: 80 mA

Maximum DC Collector Current: 80 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 70

Collector- Emitter Voltage VCEO Max: 12 V